Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation
Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in the form of a slow, monotonic, temporal increase in the threshold voltage of the device.A method for counteracting instability inspired by a physical model for threshold voltage drift in pH-sensitive ISFETs is presented.This method involves adjusting th